Journal of Iranian Ceramic Society
Volume 20, Issue 3 (11-2024)
Jicers 2024, 20(3): 8-15 |
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zolfi M, Mortazavi Z, Reyhani A, parvin P. Controlled Engineering of Structure and Bandgap in WS2 Nano structures via Plasma Treatment. Jicers 2024; 20 (3) :8-15
URL: http://jicers.ir/article-1-493-en.html
URL: http://jicers.ir/article-1-493-en.html
international university of imam khomeini , z.mortazavi@aut.ac.ir
Abstract: (124 Views)
In this study, two-dimensional tungsten disulfide (WS2) nanostructures were synthesized on silicon substrates via thermal chemical vapor deposition (CVD) at 1100 °C, using argon as the carrier gas at a flow rate of 150 sccm for 60 minutes in a three-zone furnace. The as-grown samples were subsequently treated with direct current (DC) argon plasma at a power of 70 W and a flow rate of 5 sccm for 10 minutes. The objective was to examine the influence of plasma treatment on the structural and optical characteristics of WS2. X-ray diffraction (XRD) analysis revealed an enhancement in the intensity of the (002) diffraction peak at 14°, suggesting improved crystallinity and reduced secondary phases. UV–Visible absorption spectroscopy indicated a blue shift of the excitonic A peak from 630 nm to 624 nm, corresponding to an increase in the band gap due to a reduction in layer number. Raman spectroscopy showed a decrease in the E2g peak intensity at 342 cm⁻¹ and an increased I(A₁g)/I(E2g) ratio, confirming layer thinning. These results demonstrate that plasma treatment is an effective approach for tailoring WS2 layer thickness and optimizing its properties for optoelectronic applications.
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